Product Summary

The FF200R17KE3 is an IGBT-Module.

Parametrics

FF200R17KE3 maximum rated values: (1)collector-emitter voltage VCES: 1700 V; (2)IC,nom.: 200 A; (3)DC-collector current IC: 310 A; (4)repetitive peak collector current ICRM: 400 A; (5)total power dissipation Ptot: 1250 W; (6)gate-emitter peak voltage VGES: +/- 20 V.

Features

FF200R17KE3 characteristic values: (1)VCE sat: 2 to 2.45 V; (2)collector-emitter saturation voltage: 2.4 V; (3)gate threshold voltage: 5.2 to 6.4 V; (4)input capacitance Cies: 18.0 nF; (5)collector-emitter cut-off current ICES: 3.0 mA; (7)gate-emitter leakage current IGES: 400 nA.

Diagrams

FF200R17KE3 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FF200R17KE3
FF200R17KE3

Infineon Technologies

IGBT Modules N-CH 1.7KV 390A

Data Sheet

0-6: $102.62
6-10: $92.35
FF200R17KE3_S4
FF200R17KE3_S4

Infineon Technologies

IGBT Modules IGBT 1200V 200A

Data Sheet

0-6: $102.60
6-10: $92.40